Modeling of Oxidation-Induced Strain and Its Effect on the Electronic Properties of Si Waveguides

We have studied the influence of oxidation-induced strain on the electronic structure in Si quantum wires and quantum point contacts. The strain calculations were done using a semiempirical approximation which enabled three-dimensional (3-D) strain simulations of the device structures. The strain-induced deformation of the conduction band gives rise to a 3-D potential minimum having a depth of 35 meV. In addition to the formation of localized electron states in the channel, our calculations predict crossing of transverse energy levels corresponding to different conduction band minima. Our calculations also predict strain-induced channeling of electrons to the edges of the structure.